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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9016 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 2. BASE 0.3 W (Tamb=25) 3. COLLECTOR Collector current 0.025 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) 123 unless otherwise specified) Test conditions MIN 30 20 5 0.1 0.1 28 270 0.3 V TYP MAX UNIT V V V Ic= 100A, IE=0 Ic= o.1mA, IB=0 IE= 100A, IC=0 VCB= 30V, IE=0 VEB= 3V, IC=0 VCE=5V, IC= 1mA IC= 10mA, IB= 1mA VCE= 5V, IC= 1mA A A Transition frequency fT f =100MHz 300 MHz CLASSIFICATION OF hFE(1) Rank Range D 28-45 E 39-60 F 54-80 G 72-108 H 97-146 I 132-198 J 180-270 |
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